| PART |
Description |
Maker |
| HM5425801B |
256M SSTL_2 interface DDR SDRAM(256M SSTL_2接口 DDR 同步DRAM) 256M DDR SDRAM的接口SSTL_256M SSTL_2接口的DDR同步DRAM）的
|
Hitachi,Ltd.
|
| HMT164U6BFR6C HMT164U6BFR6C-G7 HMT164U6BFR6C-H9 HM |
240pin DDR3 SDRAM Unbuffered DIMMs
256M X 64 DDR DRAM MODULE, 20 ns, DMA240
|
http://
HYNIX SEMICONDUCTOR INC
|
| EBD21RD4ADNA-E EBD21RD4ADNA-6B-E EBD21RD4ADNA-7A-E |
2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks) 256M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
|
ELPIDA MEMORY INC
DRAM
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HMT125R7AFP4C HMT125R7AFP8C HMT31GR7AMP4C HMT151R7 |
DDR3 SDRAM Registered DIMM Based on 1Gb A version
128M X 72 DDR DRAM MODULE, DMA240 ROHS COMPLIANT, RDIMM-240
512M X 72 DDR DRAM MODULE, DMA240
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| K4H1G0438M-UC/LA2 K4H1G0838M-UC/LA2 K4H1G0838M-UC/ |
128M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
0603 18 OHM 1/16W
RESISTOR, 1K, 1%, SMT 0603
1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYS64D128320HU-6-B HYS64D128320HU-5-B HYS72D128320 |
DDR SDRAM Modules - 1GB (128Mx64) PC2700 2-bank
DDR SDRAM Modules - 1GB (128Mx64) PC3200 2-bank
DDR SDRAM Modules - 1GB (128Mx72) PC3200 2-bank
DDR SDRAM Modules - 1GB (128Mx72) PC2700 2-bank
|
Infineon
|
| K4B1G1646C-ZCF7 K4B1G0846C-ZCF7 K4B1G0446C-ZCF7 K4 |
1Gb C-die DDR3 SDRAM Specification
|
Samsung semiconductor
|
| IS43TR16640A |
128MX8, 64MX16 1Gb DDR3 SDRAM
|
Integrated Silicon Solution, Inc
|
| K4B1G0446D |
1Gb D-die DDR3 SDRAM Specification
|
Samsung semiconductor
|
| K4B1G1646C |
1Gb C-die DDR3 SDRAM Specification
|
Samsung semiconductor
|
